PMA-545G1+: LTE Performance vs. Output Power
LTE Base Station MMIC Amplifier
Mini-Circuits PMA-545G1+ High Dynamic Range and Super Low Noise MMIC Amplifier is designed specifically for applications which require high linear performance, advanced digital communications systems such as LTE which require excellent ACLR suppression and low EVM.
The E-PHEMT based PMA-545G1+ provides typically +34 dBm OIP3 which translates to high linear performance in multi-carrier and complex signal environments such as LTE supporting ACLR_1 Measurements of better than -60 dBc at +4 dBm output.
The PMA-545G1+ is characterized using a high peak-to-average ratio OFDM signal used for next generation LTE within the 700MHz Downlink Band.
DUT Configuration:
Device: PMA-545G1+ Test board
Supply Voltage: 5V, 146 mA
Temperature: 25°C
Note: All data is referenced to the PCB connectors
Test Signal:
LTE FDD Downlink (2009-3)
Full filled 64 QAM, 10MHz (50 RB)
Fc = 700 MHz
Measurement Setup
Summary Data
